Method of controlling ion energy distribution using a pulse generator with a current-return output stage

ABSTRACT

Embodiments of this disclosure describe an electrode biasing scheme that enables maintaining a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate that consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/976,728, filed on May 10, 2018, which is herein incorporated byreference in its entirety.

BACKGROUND Field

Embodiments described herein generally relate to plasma processingchambers used in semiconductor manufacturing.

Description of the Related Art

Reliably producing high aspect ratio features is one of the keytechnology challenges for the next generation of very large scaleintegration (VLSI) and ultra large scale integration (ULSI) ofsemiconductor devices. One method of forming high aspect ratio featuresuses a plasma assisted etching process, such as a reactive ion etch(RIE) plasma process, to form high aspect ratio openings in a materiallayer, such as a dielectric layer, of a substrate. In a typical RIEplasma process, a plasma is formed in an RIE processing chamber and ionsfrom the plasma are accelerated towards a surface of a substrate to formopenings in a material layer disposed beneath a mask layer formed on thesurface of the substrate.

A typical Reactive Ion Etch (RIE) plasma processing chamber includes aradio frequency (RF) bias generator, which supplies an RF voltage to a“power electrode”, a metal baseplate embedded into the “electrostaticchuck” (ESC) assembly, more commonly referred to as the “cathode”. FIG.1A depicts a plot of a typical RF voltage to be supplied to a powerelectrode in a typical processing chamber. The power electrode iscapacitively coupled to the plasma of a processing system through alayer of dielectric material (e.g., ceramic material), which is a partof the ESC assembly. The application of RF voltage to the powerelectrode causes an electron-repelling plasma sheath (also referred toas the “cathode sheath”) to form over a processing surface of asubstrate that is positioned on a substrate supporting surface of theESC assembly during processing. The non-linear, diode-like nature of theplasma sheath results in rectification of the applied RF field, suchthat a direct-current (DC) voltage drop, or “self-bias”, appears betweenthe substrate and the plasma, making the substrate potential negativewith respect to the plasma potential. This voltage drop determines theaverage energy of the plasma ions accelerated towards the substrate, andthus etch anisotropy. More specifically, ion directionality, the featureprofile, and etch selectivity to the mask and the stop-layer arecontrolled by the Ion Energy Distribution Function (IEDF). In plasmaswith RF bias, the IEDF typically has two peaks, at low and high energy,and some ion population in between, as illustrated in FIG. 1B. Thepresence of the ion population in-between the two peaks of the IEDF isreflective of the fact that the voltage drop between the substrate andthe plasma oscillates at the RF bias frequency. When a lower frequency,e.g., 2 MHz, RF bias generator is used to get higher self-bias voltages,the difference in energy between these two peaks can be significant; andbecause the etch profile due to the ions at low energy peak is moreisotropic, this could potentially lead to bowing of the feature walls.Compared to the high-energy ions, the low-energy ions are less effectiveat reaching the corners at the bottom of the etched feature (e.g., dueto the charging effect), but cause less sputtering of the mask material.This is important in high aspect ratio etch applications, such ashard-mask opening or dielectric mold etch.

As feature sizes continue to diminish and the aspect ratio increases,while feature profile control requirements get more stringent, itbecomes more desirable to have a well-controlled Ion Energy DistributionFunction (IEDF) at the substrate surface during processing. Asingle-peak IEDF can be used to construct any IEDF, including a two-peakIEDF with independently controlled peak heights and energies, which isbeneficial for high-precision plasma processing. The authors havenoticed that creating a single-peak IEDF, such as the single-peak IEDF520 shown in FIG. 5C, requires having a nearly constant potentialdifference between the plasma and the substrate, i.e. a nearly constantsheath voltage, because the sheath voltage determines the ion energy atthe surface of a substrate during processing. Assuming a nearly constantplasma potential (which is typically not more than a few tens of voltsabove ground potential in processing plasmas), this requires maintaininga nearly constant negative potential at the surface of the substratewith respect to ground. The authors have further noticed that thiscannot be accomplished by simply applying a DC voltage to a powerelectrode. This is because in the presence of the electron-repellingplasma (cathode) sheath, the ion current from the bulk plasma is notbalanced by the electron current from the bulk plasma, due to the sheathelectric field repelling the electrons away from the substrate. As aresult, the unbalanced net current from the bulk plasma (equal to theion current) is constantly charging the substrate surface, whichultimately leads to all of the applied DC voltage being dropped acrossthe substrate and a dielectric layer of the ESC assembly (i.e., chuckcapacitor) instead of across the plasma sheath (i.e., sheath capacitor)as desired.

Accordingly, there is a need in the art for novel biasing methods thatenable maintaining a nearly constant sheath voltage (equal to the valueof the substrate voltage to ground, assuming near-zero plasma potential)and thus creating a mono-energetic IEDF at the surface of the substrate;consequently enabling a precise control over the shape of IEDF and theprofile of the features formed in the surface of the substrate.

SUMMARY

Embodiments of the disclosure provided herein may include a method ofprocessing of a substrate that enables maintaining a nearly constantsheath voltage for up to about 90% of the substrate processing time isprovided. The performed method will result in a single (narrow) peak ionenergy distribution function (IEDF) that can be further used to createan IEDF with an arbitrary shape. Herein, the method includes generatinga plasma over a surface of a substrate disposed on a substrate supportand establishing a pulsed voltage waveform at a biasing electrodedisposed within the substrate support. The pulsed voltage waveform isestablished at the biasing electrode using a pulsed bias generatorcoupled to the biasing electrode by a second electrical conductor. Thepulsed bias generator includes a pulse generator and a current-returnoutput stage which are simultaneously coupled to the second electricalconductor. The pulse generator that maintains a predetermined, positivevoltage across its output (i.e. to ground) during regularly recurringtime intervals of a predetermined length, by repeatedly closing andopening its internal switch at a predetermined rate. The pulse generatorincludes a constant voltage source, a switch, and a snubber. Whenclosed, the switch electrically couples a positive output of thesubstantially constant voltage source to an output of the pulsegenerator that is simultaneously coupled through a first electricalconductor to the second electrical conductor. The snubber, for example a“flyback” diode, across the output of the pulse generator minimizes (or“snubs”) the possible voltage spikes during the rapid release of themagnetic energy by the inductive components (such as first and secondelectrical conductors) following the opening of the switch. Herein, afirst end of the current-return output stage is electrically coupledthrough a first electrical conductor to a positive output of thenanosecond pulse generator and simultaneously to the second electricalconductor, and a second end of the current-return output stage iselectrically coupled to ground.

In some embodiments the pulsed voltage waveform includes a plurality ofpulsed voltage cycles, where each pulsed voltage cycle includes a sheathcollapse phase, a chuck capacitor recharging phase, a sheath formationphase, and an ion current phase. During the collapse phase the switch isclosed and a sheath capacitance is discharged by the current supplied bythe pulse generator. During the chuck capacitor recharging phase theswitch is maintained in the closed position and a positive charge isprovided to the biasing electrode by the current from the pulsegenerator. During the sheath formation phase the switch is opened andthe current flows from the sheath and stray capacitances to groundthrough the current-return output stage. During the ion current phasethe switch is maintained in an open position and an ion current,likewise flowing from the plasma to ground through the current-returnoutput stage, causes accumulation of the positive charge on thesubstrate surface and gradually discharges the sheath and chuckcapacitors, thus slowly decreasing the sheath voltage drop.

In some embodiments, the sheath collapse phase, the recharging phase,and the sheath formation phase have a combined duration of between about200 ns and about 300 ns. In some embodiments, a positive output voltageof the pulse generator, during the time when the switch remains closed,is between about 0.1 kV and about 10 kV. In some embodiments, the switchremains in the closed position for between about 10 ns and about 100 nsof each pulsed voltage cycle. In some embodiments, each pulsed voltagecycle has a duration of between about 2 ps and about 3 ps. In someembodiments, the combined sheath collapse phase and recharging phasecomprise less than about 10% of the pulsed voltage cycle. In someembodiments, the biasing electrode is spaced apart from a substratesupporting surface of the substrate support by a layer of the dielectricmaterial, and wherein a combined series capacitance of the layer of thedielectric material of the substrate support and the substrate disposedthereon is between about 5 nF and about 12 nF. In some embodiments, achucking power supply is coupled to the external electrical conductor ata connection point, and wherein a blocking capacitor, having acapacitance of between about 40 nF and about 80 nF, is disposed inseries with the pulsed bias generator between the pulsed bias generatorand the connection point. In some embodiments, a blocking resistor,having a resistance more than about 1 MOhm, is disposed between thechucking power supply and the connection point.

In another embodiment, a processing chamber includes a chamber lid, oneor more sidewalls, and a chamber base which together define a processingvolume. The processing chamber further includes a substrate supportdisposed in the processing volume, where the substrate support includesa biasing electrode that is separated from a substrate supportingsurface of the substrate support by a dielectric material layer, and apulsed bias generator coupled to the biasing electrode by a secondelectrical conductor. The pulsed bias generator includes a pulsegenerator and a current return stage. The pulse generator includes, avoltage source, a switch that, when closed, electrically couples apositive output of the voltage source to an output of the pulsegenerator, where the output of the pulse generator is coupled through afirst electrical conductor to the second electrical conductor, and asnubber across the output of the pulse generator. The voltage source maybe a constant voltage source. Herein, a first end of the current-returnoutput stage is simultaneously electrically coupled to the secondelectrical conductor and through a first electrical conductor to apositive output of the pulse generator and a second end of thecurrent-return output stage is electrically coupled to the ground. Insome embodiments, the processing chamber includes an inductively coupledplasma (ICP) or capacitively coupled plasma (CCP) plasma generator.

Embodiments of the present disclosure may further include a processingchamber, comprising a substrate support comprising a biasing electrodethat is separated from a substrate supporting surface of the substratesupport by a dielectric material layer, and a bias generator that iscoupled to the biasing electrode by an electrical conductor. The biasgenerator includes a pulse generator, comprising a voltage source havinga positive terminal and a negative terminal, wherein the negativeterminal is coupled to ground, a switch that, when closed, electricallyconnects the positive terminal to an end of the electrical conductor;and a snubber connected between the end of the electrical conductor andthe ground. The bias generator also includes a current-return outputstage, wherein a first end of the current-return output stage iselectrically coupled to the electrical conductor, and a second end ofthe current-return output stage is electrically coupled to the ground.The electrical conductor may further include a first electricalconductor and a second electrical conductor that are connected inseries, wherein one end of the first electrical conductor is connectedto the positive terminal of the voltage source and one end of the secondelectrical conductor is connected to the biasing electrode. In someconfigurations, the first electrical conductor is an “internal”electrical conductor found within the bias generator, and the secondelectrical conductor is an “external” electrical conductor disposedbetween the bias generator and the biasing electrode.

Embodiments of the present disclosure may further include a method ofprocessing of a substrate, comprising generating a plasma over a surfaceof a substrate disposed on a substrate support, and biasing a biasingelectrode disposed within the substrate support using a bias generatorthat is coupled to the biasing electrode by an electrical conductor. Thebias generator includes a pulse generator, comprising a voltage sourcehaving a positive terminal and a negative terminal, wherein the negativeterminal is coupled to ground, and a switch that, when closed,electrically connects the positive terminal to the electrical conductor;and a current-return output stage, wherein a first end of thecurrent-return output stage is electrically coupled to the electricalconductor, and a second end of the current-return output stage iselectrically coupled to the ground. The method of biasing the biasingelectrode comprises generating a pulsed voltage waveform at the biasingelectrode by repetitively closing the switch for a first period of timeand then opening the switch for a second period of time a plurality oftimes, wherein closing the switch causes a positive voltage relative tothe ground to be applied to the electrical conductor by the voltagesource during the first period of time, and opening the switch causes acurrent flow from the biasing electrode to ground through thecurrent-return output stage during at least a portion of the secondperiod of time. The method may also include substantially eliminating asheath voltage drop formed over the surface of the substrate, by thegenerated plasma, by the end of the first period of time, and causing acurrent to flow from the biasing electrode to ground through thecurrent-return output stage during the second period of time. The methodmay also include forming a plasma potential, and the first period oftime comprises a sheath collapse phase having a first time duration,wherein at the end of the first time duration a potential formed on thesurface of the substrate substantially equals the plasma potential ofthe generated plasma, and a chuck capacitance recharging phase having asecond time duration, wherein a sheath voltage drop formed over thesurface of the substrate by the generated plasma is eliminated after thefirst time duration and the second time duration have been sequentiallycompleted. The second period of time may comprise a sheath formationphase having a third time duration, wherein the current flow from thebiasing electrode to ground through the current-return output stageoccurs during the third time duration, and an ion current phase having afourth time duration, wherein the fourth time duration is longer thanthe first, second and third time durations combined.

Embodiments of the present disclosure further include a processingchamber that includes a substrate support that includes a biasingelectrode that is separated from a substrate supporting surface of thesubstrate support by a dielectric material layer, and a bias generatorthat is coupled to the biasing electrode by an electrical conductor. Thebias generator comprises a pulse generator, comprising a voltage sourcehaving a positive terminal and a negative terminal, wherein the negativeterminal is coupled to ground, and a switch that, when closed,electrically connects the positive terminal to an end of the electricalconductor. The bias generator also comprises a current-return outputstage, wherein a first end of the current-return output stage iselectrically coupled to the electrical conductor, and a second end ofthe current-return output stage is electrically coupled to the ground.The processing chamber also includes a computer readable medium havinginstructions stored thereon for performing a method of processing asubstrate when executed by a processor, the method comprising generatinga plasma over a surface of a substrate disposed on the substratesupport, and biasing the biasing electrode using the bias generator,wherein biasing the biasing electrode comprises generating a pulsedvoltage waveform at the biasing electrode by repetitively closing theswitch for a first period of time and then opening the switch for asecond period of time a plurality of times, and wherein closing theswitch causes a positive voltage relative to the ground to be applied tothe end of the electrical conductor during the first period of time, andopening the switch causes a current flow from the biasing electrode toground through the current-return output stage during at least a portionof the second period of time. The electrical conductor may furtherinclude a first electrical conductor and a second electrical conductorthat are connected in series, wherein one end of the first electricalconductor is connected to the positive terminal of the voltage sourceand one end of the second electrical conductor is connected to thebiasing electrode.

BRIEF DESCRIPTION OF THE DRAWINGS

So that the manner in which the above recited features of the presentdisclosure can be understood in detail, a more particular description ofthe disclosure, briefly summarized above, may be had by reference toembodiments, some of which are illustrated in the appended drawings. Itis to be noted, however, that the appended drawings illustrate onlytypical embodiments of this disclosure and are therefore not to beconsidered limiting of its scope, for the disclosure may admit to otherequally effective embodiments.

FIG. 1A illustrates an RF voltage waveform provided to a biasingelectrode of a plasma processing chamber, according to the prior art.

FIG. 1B illustrates an Ion Energy Distribution Function (IEDF) at thesurface of a substrate during a plasma process performed in aconventional process chamber, according to the prior art.

FIG. 2 is a schematic cross-sectional view of an example processingchamber configured to practice methods described herein, according toone embodiment.

FIG. 3 is a functionally equivalent approximate circuit diagram of thepulsed voltage biasing scheme described herein, according to oneembodiment.

FIG. 4 is a flow diagram of a method of processing a substrate using apulsed voltage biasing scheme described herein, according to oneembodiment.

FIGS. 5A-5C illustrate the method set forth in FIG. 4.

FIG. 6 is a simplified circuit diagram of the biasing scheme describedin relation to FIGS. 2-3.

FIGS. 7A-7H illustrate the results of numerical simulations of biasingschemes described herein.

FIG. 8 shows an oscilloscope trace of the measured substrate voltagewaveform produced by a practical implementation of the pulsed voltagebiasing scheme proposed herein.

To facilitate understanding, identical reference numerals have beenused, where possible, to designate identical elements that are common tothe figures. It is contemplated that elements and features of oneembodiment may be beneficially incorporated in other embodiments withoutfurther recitation.

DETAILED DESCRIPTION

Embodiments described herein are applicable to all plasma assisted orplasma enhanced processing chambers and methods of plasma assisted orplasma enhanced processing of a substrate. More specifically,embodiments of this disclosure describe an electrode biasing scheme thatenables maintaining a nearly constant sheath voltage and thus creating amono-energetic IEDF at the surface of the substrate; consequentlyenabling a precise control over the shape of IEDF and the profile of thefeatures formed in the surface of the substrate. The followingdefinitions are used throughout this disclosure: (1) unless a referenceis specified, all potentials are referenced to ground; (2) the voltageat any physical point (like a substrate or a biasing electrode) islikewise defined as the potential of this point with respect to ground(zero potential point); (3) the cathode sheath is implied to be anelectron-repelling, ion-accelerating sheath that corresponds to anegative substrate potential with respect to plasma; (4) the sheathvoltage (also referred to sometimes as “sheath voltage drop”), V_(sh),is defined as the absolute value of the potential difference between theplasma and the adjacent surface (e.g. of the substrate or the chamberwall); and (5) the substrate potential is the potential at the substratesurface facing the plasma.

We propose a pulsed voltage biasing scheme (such as the biasing schemedescribed in relation to FIGS. 2 and 3), in which a pulsed biasgenerator (such as a pulsed bias generator 240 in FIG. 2) is used toestablish a pulsed voltage waveform (such as the pulsed voltage waveform500 shown in FIG. 5A) at a biasing electrode (such as the chucking pole204) that is separated from the substrate by a thin layer of adielectric material within the ESC assembly (this thin layer forms ESCcapacitor, C_(ESC)). This pulsed voltage biasing scheme enablesmaintaining a nearly constant sheath voltage for up to about 90% of thesubstrate processing time, which results in a single (narrow) peak IEDF(such as IEDF 520 in FIG. 5C) that can be further used to create an IEDFwith an arbitrary shape.

We note the possibility of using other biasing schemes for establishinga pulsed voltage waveform such as the waveform 500 (illustrated in FIG.5A) at a biasing electrode (such as the chucking pole) that is separatedfrom the substrate by a thin layer of a dielectric material within theESC assembly. Therefore, we separately propose (without specifying abiasing scheme) that establishing a pulsed voltage waveform such as thewaveform 500 at the said biasing electrode enables maintaining a nearlyconstant sheath voltage for up to about 90% of the substrate plasmaprocessing time, which results in a single (narrow) peak IEDF that canbe used to create an IEDF with the arbitrary shape.

One embodiment of the pulsed voltage biasing scheme proposed above isshown in the chamber diagram illustrated in FIG. 2; the equivalentelectrical circuit of this biasing scheme is illustrated in FIG. 3; andthe simplified form of this equivalent electrical circuit is shown inFIG. 6. The simplified electrical circuit shown in FIG. 6 is modelednumerically to produce the results shown in FIGS. 7A-7H.

FIG. 2 shows the chamber diagram that includes the pulsed voltagebiasing scheme proposed above, in accordance with one embodiment (a moredetailed description of FIG. 2 is given later in the text). The biasingscheme described herein fundamentally consists of the following maincomponents:

(1) a nanosecond pulse generator 214 that maintains a predetermined,substantially constant positive voltage across its output (i.e. toground) during regularly recurring time intervals of a predeterminedlength, by repeatedly closing and opening its internal switch at apredetermined rate. FIG. 2 shows a simplified, functionally equivalentschematic representation of the nanosecond pulse generator. In FIG. 2,the nanosecond pulse generator is reduced to a minimal combination ofthe components that are important for understanding of its role inestablishing a desired pulsed voltage waveform (such as waveform 500) atthe biasing electrode (such as chucking pole 204). These componentsgenerally include an internal voltage source, a high repetition rateswitch, and a flyback diode. It needs to be understood that an actualnanosecond pulse generator may include any number of internal componentsand may be based on a more complex electrical circuit than that of FIG.2. In turn, a schematic diagram of FIG. 2 provides only a functionallyequivalent representation of the components of the nanosecond pulsegenerator and its electrical circuitry, inasmuch as is required toexplain the fundamental principle of its operation, its interaction withthe plasma in the processing volume, and its role in establishing apulsed voltage waveform (such as waveform 500) at the biasing electrode(such as chucking pole 204). As can be inferred from a schematic diagramshown in FIG. 2, when the switch S₁ moves from the open (Off) to theclosed (On) position, it connects the output of the nanosecond pulsegenerator to its internal voltage source that produces a substantiallyconstant output voltage. In fact, as can be seen from a more detailed(but still simplified) equivalent electrical circuit of oneimplementation of the nanosecond pulse generator shown in FIG. 3, theswitch actually connects the internal battery to the step-up outputtransformer. This detail is not critical for understanding of thefundamental principle of operation of the nanosecond pulse generator andits function in establishing a pulsed voltage waveform (such as waveform500) at the biasing electrode (such as chucking pole 204), but it has animportant practical implication that will be described later. Thepurpose of a flyback diode, which can also be substituted by a differentsnubber circuit, is to suppress, or “snub”, a possible voltage spikecaused by opening of the switch S₁, which is followed by a rapid releaseof the magnetic energy accumulated in the inductive elements. Theseinductive elements comprise: (A) an external electrical conductor, suchas the transmission line 206 with the combined inductance L_(transm),and (B) components of the pulsed bias generator 240, including aninternal electrical conductor connecting the nanosecond pulse generator214 and the current-return output stage 215, with the combinedinductance L_(internal). The magnetic energy accumulates in inductiveelements during the time interval, when the switch S₁ remains in theclosed position and the nanosecond pulse generator supplies the currentto the system. The magnitude V_(m) of the nanosecond pulse generatoroutput voltage, V₀, during the time interval when the switch S₁ is inthe closed (On) position, and a substantially constant positive outputvoltage (equal to V_(m)) is maintained, can be as high as severalkilovolts (e.g., 0.1-10 kV). The time interval during which the switchremains in the closed (On) position and the substantially constantpositive output voltage is maintained is referred to as the “pulsewidth”.

and it can be as long as several tens of nanoseconds (e.g., 10-100 ns).In turn, the time interval during which the switch transitions from theopen (Off) to the closed (On) position is referred to as the “risetime”, τ_(rise), and it can also be several tens of nanoseconds (e.g.,25-50 ns). As the switch transitions from the open to the closedposition, the output voltage of the nanosecond pulse generator graduallyincreases until it reaches V_(m). Finally, the length of time betweenthe two consecutive transitions from the open (Off) to the closed (On)position (or vice versa) is referred to as the “period”. T, and it isequal to the inverse of the pulse repetition frequency, which can be ashigh as 400 kHz, for example. We note the following: (a) in the pulsedvoltage biasing scheme proposed herein, a nanosecond pulse generator isused primarily as a charge injector (current source), and not as aconstant voltage source; therefore it is not necessary to imposestringent requirements on the stability of its output voltage, in thatit can vary in time even when the switch remains in the closed (On)position; (b) a nanosecond pulse generator is fundamentally a sourcing,but not a sinking supply, in that it only passes a current in onedirection (so it can only charge, but not discharge a capacitor, forexample); (c) when the switch remains in the open (Off) position, thevoltage, V₀, across the output of the nanosecond pulse generator is notcontrolled by the internal voltage source and is instead determined bythe interaction of its internal components with other circuit elements;and (d) the name “nanosecond pulse generator” originates from the factthat when it is operating into a low stray capacitance/inductance,predominantly resistive load, it generates a voltage waveform across itsoutput, which can be described as a series of ground referenced positivevoltage pulses.

(2) a current-return output stage, 215, with one end 215B connected toground, and the other end 215A connected through the internal electricalconductor to the positive output of the nanosecond pulse generator andsimultaneously to the external electrical conductor. The combination ofthe nanosecond pulse generator with the current-return output stage andthe internal electrical conductor is referred to here as a “pulsed biasgenerator” 240 and it is both a sourcing and a sinking supply, in thatit passes a current in both directions. A current-return output stagecan be comprised of the following elements: (a) a resistor, (b) aresistor and an inductor connected in series, or (c) a more complexcombination of electrical elements, including parallel capacitors, whichpermits a positive current flow towards the ground.

(3) An external electrical conductor connecting the output of the pulsedbias generator 240 to the chucking pole. The output of the pulsed biasgenerator 240 is the point 215A, where the output of the nanosecondpulse generator 214 is connected through the internal electricalconductor to the current-return output stage 215. The externalelectrical conductor may comprise: (a) a coaxial transmission line 206,which may include a flexible coaxial cable with the inductance L_(flex)in series with a rigid coaxial transmission line with the inductanceL_(rigid), (b) an insulated high-voltage corona-resistant hookup wire,(c) a bare wire, (d) a metal rod, (e) an electrical connector, or (f)any combination of electrical elements in (a)-(e). Note that theinternal electrical conductor may comprise the same basic elements asthe external electrical conductor. The chucking pole is usually a metalplate embedded into the electrostatic chuck and separated from theplasma by a thin layer of dielectric material (e.g., ˜0.3 mm thick). Thechucking pole can be the biasing electrode 204 embedded within theelectrostatic chuck portion (i.e., ESC substrate support 205) of the ESCassembly shown in FIG. 2. The external conductor, such as thetransmission line 206, and the biasing electrode 204 have some combinedstray capacitance to ground, C_(s).

FIG. 3 depicts a functionally equivalent, simplified electrical circuit300 of the pulsed voltage biasing scheme proposed herein, including theplasma in the process volume. In turn, FIG. 6 depicts a circuit 600,which is a further simplified version of the circuit 300. These circuitsare used only to model the main aspects of the interaction of the pulsedbias generator (such as 240) with the processing chamber 308; explainits basic principle of operation and its role is establishing of thepulsed voltage waveform (such as 500) at a biasing electrode (such as204); describe the accompanying physical phenomena taking place duringdifferent phases of the pulsed voltage waveform (such as 500); andgenerally explain the basic principle of operation of the pulsed voltagebiasing scheme proposed herein. In practice, interaction of the pulsedvoltage biasing scheme described herein with the plasma in the processvolume may be accompanied by complex physical phenomena (e.g.,high-frequency oscillations caused by the presence of inductiveelements, such as external and internal electrical conductors), whichare largely omitted from consideration here. It needs to be understood,however, that while the discussion (later in the text) in relation tothe phases 501-504 of the pulsed voltage waveform (such as 500) islargely based on the simplified circuit model 600 with some more complexphysical phenomena omitted from consideration, those phenomena are notcritical for understanding of the basic principle of operation of thepulsed voltage biasing scheme proposed herein. Furthermore, although thewaveforms in FIGS. 5A-5B and 7A-7H are produced by numericallysimulating the simplified circuit 600 using OrCAD P-Spice Designersoftware (with a different set of circuit parameters used to generateeach figure set), the main underlying physical phenomena revealed by themodeling (namely, sheath collapse, ESC recharging, sheath formation, andcharging of the substrate surface by the ion current) are relevant foran actual system. In the equivalent circuits 300 and 600 shown in FIGS.3 and 6, respectively, all relevant physical components displayed in thechamber diagram of FIG. 2 are represented by discrete circuit elements,according to the following explanations.

Firstly, the dielectric layer in the electrostatic chuck, and theprocessed substrate (e.g., a 0.8 mm thick doped-silicon slab with thecapacitance of >10 nF) placed on its surface separate the chucking polefrom the plasma and are represented in the circuits in FIGS. 3 and 6 bya single chuck capacitor 303 (which in reality is two capacitorsconnected in series) with a capacitance C_(e) (˜7-10 nF, for example).In other words, we consider the substrate (typically made out of a thinlayer of a semiconductor and/or dielectric material) to be electricallya part of the ESC dielectric layer and whenever we refer to the chuckcapacitance C_(e), we will imply that C_(e) is the combined seriescapacitance of the ESC (i.e., C_(ESC)) and the substrate (i.e.,C_(wafer)). Since the substrate capacitance C_(wafer) is typically verylarge (>10 nF), or substrate may be conductive (infinite capacitance),the series capacitance is determined primarily by the actual C_(ESC).

Secondly, the chucking pole 204, the pulsed bias generator 240, and theexternal electrical conductor (such as the transmission line 206)connecting them together have: (A) some combined stray capacitance toground, which is represented in the circuit 600 by a single straycapacitor 302 with the capacitance C_(s) (˜500 pF, for example); as wellas (B) some inductance, which is represented in the circuit 600 byinductors L_(internal) (˜300 nH, for example) for the internalelectrical conductor and other components of the pulsed bias generator240, and L_(transm) (˜500 nH, for example) for the external electricalconductor, such as the transmission line 206. The current-return outputstage 215 is represented in the circuit 600 by a single resistor R_(ros)(˜150 Ohm, for example).

Thirdly, we use the standard electrical plasma model that represents theentire plasma in the process volume as 3 series elements:

I. An electron-repelling cathode sheath 304 (which we sometimes alsorefer to as the “plasma sheath” or just the “sheath”) adjacent to thesubstrate. The cathode sheath is represented in FIGS. 3 and 6 by aconventional 3-part circuit element comprising: (a) the diode D_(SH),which when open represents the sheath collapse, (b) the current sourceI_(i) (e.g., ˜0.5-5 A), representing the ion current flowing to thesubstrate in the presence of the sheath, and (c) the capacitor C_(SH)(˜100-300 pF, for example, for high aspect ratio applications), whichrepresents the sheath for the main portion of the biasing cycle (˜90%),i.e. ion current phase, during which the ion acceleration and theetching occur.

II. a bulk plasma 305, represented in FIGS. 3 and 6 by a single resistorR_(pi) (e.g., ˜5-10 Ohms),

III. an electron-repelling wall sheath 306 forming at the chamber walls.The wall sheath is likewise represented in FIGS. 3 and 6 by a 3-partcircuit element comprising: (a) the diode D_(w), (b) the current sourceI_(iw) (e.g., ˜5-10 A) representing the ion current to the wall, and (c)the capacitor C_(w) (e.g., ˜5-10 nF), which represents the wall sheathprimarily during the ESC recharging phase 502 (described later in thetext), when there is no electron-repelling cathode sheath and the wallsheath capacitor is being charged by the large current pushed throughthe ESC by the nanosecond pulser. Because the cathode sheath is muchthicker than the wall sheath (due to a high voltage), and the total wallarea is much larger than the substrate area, we have selectedC_(w)>>C_(SH). The interior surface of the grounded metal walls isconsidered be coated with a thin layer of a dielectric material,represented in FIGS. 3 and 6 by a large capacitor C_(coat) (e.g.,˜300-1000 nF).

FIG. 4 depicts a flow diagram illustrating a method 400 of processing asubstrate using the pulsed voltage biasing scheme described herein,according to one embodiment. At activity 401, the method 400 includesgenerating a plasma over a surface of a substrate disposed on asubstrate support. At activity 402, the method 400 includes establishinga pulsed voltage waveform at a biasing electrode disposed within thesubstrate support using a pulsed bias generator coupled to the biasingelectrode using an external electrical conductor, such as a transmissionline 206.

FIG. 5A illustrates the pulsed voltage waveform 500 established at thebiasing electrode. The pulsed voltage waveform 500 shown in FIG. 5Aresults in the substrate voltage waveform 510 shown in FIG. 5B, and thusenables keeping the sheath voltage nearly constant for about 90% of thesubstrate processing time. Voltage waveforms 500 and 510 pictured inFIGS. 5A-5B, as well as waveforms shown in FIGS. 7A-7H, were produced bynumerically simulating the simplified circuit 600 using OrCAD P-SpiceDesigner software. The circuit parameters used to generate FIGS. 5A-5Bwere selected to clearly illustrate the different phases of thewaveforms 500 and 510 (for example, the waveform period was set to 1μs). Conversely, the parameters used to generate FIGS. 7A-7H wereselected to demonstrate a potential practical implementation of thepulsed voltage biasing scheme proposed herein (for example, the waveformperiod was set to 2.5 μs). We note that waveforms illustrated in FIGS.5A-5B and 7A-7H should be interpreted as simplified, schematicrepresentations of the experimentally observable waveforms, such as theone shown in FIG. 8. The actual waveforms can be significantly morecomplex and contain a number of fine-scale features (e.g.,high-frequency oscillations caused by the presence of inductiveelements, such as external and internal electrical conductors) that arenot shown in FIGS. 5A-5B and 7A-7H. However, these fine-scale featuresare not essential for understanding of the underlying physical phenomenadetermining the general shape of the actual pulsed voltage waveformproduced by the pulsed voltage biasing scheme proposed herein. Thus,while the discussion below is largely based on the circuit 600 andsimulated waveforms shown in FIGS. 5A-5B and 7A-7H, the main underlyingphysical phenomena (namely, sheath collapse, ESC recharging, sheathformation and charging of the substrate surface by the ion current)taking place during the phases 501-504 of the pulsed voltage waveformcycle are relevant for an actual system.

In FIG. 5A, the pulsed voltage waveform 500 comprises a periodic seriesof short positive pulses repeating with a period T (e.g., 2.5microseconds), on top of a voltage offset. A waveform within each period(repetition cycle) includes the following:

(1) A positive voltage jump to charge the system's stray capacitor andcollapse the cathode sheath, i.e., the sheath collapse phase 501, duringwhich the sheath capacitor is discharged and the substrate potential isbrought to the level of the local plasma potential (as illustrated inFIG. 5B). The sheath collapse phase 501 enables rapid recharging of thechuck capacitor by electrons provided from the plasma during the ESCrecharging phase 502. The switch S₁ (see FIG. 6) closes and remains inthe closed (On) position for the duration of the phase 501, allowing thenanosecond pulse generator, such as 214, to maintain a substantiallyconstant positive voltage across its output and supply a current to thesystem. The duration T₁ of the phase 501 is much shorter than theduration T₄ of the ion current phase 504 (described below) or than theoverall period T, and is typically of the order of several tens ofnanoseconds (e.g., 20-50 ns). This is because the plasma current duringthe phase 501 is carried by electrons—namely, the electron cloud ismoving towards the substrate and gradually sweeps over the ion spacecharge, thus eliminating the sheath voltage drop—and the electronvelocity is much greater than the ion velocity, due to a very large massratio between the two species.

(2) Recharging of the chuck capacitor C_(e), during the ESC rechargingphase 502, by rapidly injecting a charge of equal value and oppositepolarity to the total charge accumulated on the substrate surface duringthe ion current phase 504 (described below). As during the phase 501,the nanosecond pulse generator 214 maintains a substantially constantpositive voltage across its output (switch S₁ remains in the Onposition). Similarly to the phase 501, the duration T₂ of the phase 502is much shorter than the duration T₄ of the ion current phase 504(described below) or than the overall period T, and is typically of theorder of several tens of nanoseconds (e.g., 30-80 ns). This is becausethe plasma current during the phase 502 is also carried byelectrons—namely, in the absence of the cathode sheath, the electronsreach the substrate and build up the surface charge, thus charging thecapacitor C_(e).

(3) A negative voltage jump (V_(OUT)) to discharge the processingchamber's stray capacitor, re-form the sheath and set the value of thesheath voltage (V_(SH)) during the sheath formation phase 503. Theswitch S₁ in FIG. 6 opens at the beginning of the sheath formation phase503 and the inductive elements rapidly (within about 10 nanoseconds, forexample) release their stored magnetic energy into the chuck capacitor,C_(e), and the stray capacitor, C_(s). Inductive elements may includethe internal components of the pulsed bias generator 240 (e.g. theinternal conductor) represented by the inductance L_(internal), and theexternal conductor (e.g. the transmission line 206) represented by theinductance L_(transm) numbered 309 in circuit 600. During the magneticenergy release, the corresponding current flows through the flybackdiode or a different snubber circuit with a similar function ofsuppressing (or “snubbing”) the possible voltage spikes. As can be seenfrom the time-plot of the nanosecond pulse generator output voltage, V₀,shown in FIG. 7B, during the magnetic energy release, the internalvoltage source of the nanosecond pulse generator (such as 214) does notmaintain a positive output voltage (switch S₁ remains in the Offposition), so it briefly collapses to several volts below zero to allowthe flyback diode to pass the current. We note here, that without theflyback diode (or a different component with a similar function of“snubbing” the possible voltage spikes), the magnetic energy would needto be released through the resistive current-return output stage,resulting in an impractically large negative voltage across R (e.g. −20kV, which is potentially damaging to the internal components of thepulsed bias generator 240) for several nanoseconds, instead ofcollapsing to near-zero values. After the magnetic energy is releasedand the current through L_(transm) drops to zero (as well as throughL_(internal)), it reverses the direction and flows from the plasma andthe stray capacitor to ground through the current-return output stage(the flyback diode, being reverse-biased, blocks the current flowthrough itself), thus discharging the stray capacitor, C_(s), andcharging the sheath capacitor, C_(sh), (i.e. re-forming the sheath). Thebeginning of sheath formation (charging of C_(sh)) can be clearlyidentified in FIG. 5B as the point, at which the substrate potentialstarts decreasing below the local plasma potential. Similarly to thephase 501, the duration T₃ of the phase 503 is much shorter than theduration T₄ of the ion current phase 504 (described below) or than theoverall period T, and is typically of the order of 100-300 ns. This isbecause the plasma current during the phase 503 is likewise carried byelectrons—namely, the electron cloud is moving away from the substrateand gradually exposes the ion space charge, thus forming the sheath andproducing the sheath voltage drop. We note that (1) T₃ is determinedprimarily by the stray capacitance, as well as the values of theelements (e.g. resistor) comprising the current-return output stage; and(2) the negative voltage jump, V_(OUT), and established sheath voltage,V_(SH), are determined by V_(m) (magnitude of the nanosecond pulsegenerator output voltage during phases 501-502), and the total pulsewidth,

=

+

=T₁+T₂. To explain the effect of

(practically controlled parameter) on V_(OUT) and V_(SH), we notice thatboth T₂ and the increase in the biasing electrode voltage, ΔV_(s,2),during the phase 502 are determined primarily by V_(m) and the ioncurrent, I_(i). Therefore, for given V_(m) and I_(i), the total pulsewidth,

controls T₁, which in turn determines the increase in the substratevoltage, ΔV_(sub,1), and biasing electrode voltage ΔV_(s,1)≃ΔV_(sub,1),during phase 501, and hence V_(OUT)=ΔV_(s,1)ΔV_(s,2), andV_(SH)≃ΔV_(sub,1).

(4) A long (about 85-90% of the cycle duration T) ion current phase 504with the duration T₄, during which the nanosecond pulse generator 214likewise does not maintain a positive voltage across its output (switchS₁ remains in the Off position) and the ion current flows from plasma toground through the current-return output stage. The ion current causesaccumulation of the positive charge on the substrate surface andgradually discharges the sheath and chuck capacitors, slowly decreasingthe sheath voltage drop and bringing the substrate potential closer tozero. This results in the voltage droop ΔV_(sh) in the substrate voltagewaveform 510 shown in FIG. 5B. The generated sheath voltage droop is whythe pulsed voltage waveform 500 needs to move to the next cycledescribed in (1)-(3) above, during which the nanosecond pulse generator214 removes the charge accumulated during the ion current phase (orrestores the initial ESC charge) and reestablishes the desired sheathvoltage, V_(SH). Note that the surface charge and sheath voltage droopaccumulate whenever there is an electron-repelling cathode sheath andthe unbalanced net current (equal to the ion current) from the bulkplasma. As was previously explained, this is because the ion currentfrom the bulk plasma is not balanced by the electron current from thebulk plasma, due to the sheath electric field repelling the electronsaway from the substrate. Thus, the surface charge accumulation andvoltage droop generation also take place during the sheath formationphase 503, during which there is a non-zero sheath voltage drop presentright from the beginning.

As can be seen from the (1)-(4) above, the combined duration of the“electron current” phases 501-503 constituting a single voltage pulse ofthe pulsed voltage waveform (such as the pulsed voltage waveform 500) isabout 200-400 ns, which corresponds to the relatively short duty cycleof about 10-15%. The short duty cycle characteristic of the pulsedvoltage waveform 500 is a consequence of a large ion-to-electron massratio that is typical for all plasmas. Thus, in the pulsed voltagebiasing scheme proposed herein, the pulsed bias generator activelyinteracts with the plasma only during a short portion of each cycle,allowing the cathode sheath to evolve naturally for the rest of thetime. By effectively using the fundamental plasma properties, thisbiasing scheme enables maintaining a nearly constant sheath voltage forup to ˜90% of the processing time, which results in a single peak IEDF(such as IEDF 520 in FIG. 5C). Conversely, in a conventional biasingscheme, an applied RF voltage (having a waveform such as the one shownin FIG. 1A) modulates the cathode sheath throughout the entire RFperiod, thus unduly varying the sheath voltage drop all of the time andresulting in a dual-peak IEDF (such as an IEDF shown in FIG. 1B).

The pulsed voltage biasing scheme proposed herein enables maintaining aparticular substrate voltage waveform, such as the substrate voltagewaveform 510 shown in FIG. 5B, which can be described as a periodicseries of short positive pulses 511 on top of the negative voltageoffset 512. During each pulse (having a total duration of T₅=T₁+T₂+T₃),the substrate potential reaches the local plasma potential and thesheath briefly collapses. However, for about 90% of each cycle (having acycle duration T), the sheath voltage drop remains nearly constant andapproximately equal to the absolute value of the most negative substratepotential, V_(SH) (FIG. 5B), which thus determines the mean ion energyat the substrate surface. During the sheath collapse phase 501 of thebiasing cycle, the current from the nanosecond pulse generator (e.g.,214) splits between the processing plasma and the stray capacitor C_(s),connected in parallel, approximately according to the ratio C_(SH)/C_(s)and is not very significant. Because of that and because C_(w) isgenerally very large, the voltage drop accumulating across the wallsheath during phase 501 is relatively small. As a result, the near-wallplasma potential, V_(w), which is equal to the sum of the wall sheathvoltage drop and the expectedly small (due to a very large C_(coat))voltage drop across the wall dielectric coating (FIG. 6), remains closeto zero (FIG. 7F). Hence, the local (near-substrate) plasma potential,V_(pl), which is equal to the sum of the near-wall plasma potential andthe voltage drop across the bulk plasma (FIG. 6), is determinedprimarily by the latter, and it increases slightly above zero (FIGS. 5Band 7F). In turn, during the ESC recharging phase 502 there is noelectron-repelling cathode sheath and the wall sheath capacitor is beingcharged to a substantial voltage (e.g. several hundred volts) by thelarge current pushed through the ESC by the nanosecond pulse generator(e.g. 214). Due to the increase of the near-wall plasma potential, aswell as the presence of a comparably large voltage drop across the bulkplasma (caused by the same large current), the local (near-substrate)plasma potential, V_(pl), as well as the substrate potential, V_(sub),experience a substantial increase of up to about ⅓ of the establishedsheath voltage, V_(SH). Finally, during the sheath formation phase 503,the current through the processing plasma is again (as in phase 501)determined by the ratio C_(SH)/C_(s) and is relatively small (alsoquickly decaying), as well as the resultant voltage drop across the bulkplasma. Therefore, the local (near-substrate) plasma potential remainsapproximately equal to the near-wall plasma potential, and they bothrelax to near-zero values closer to the end of the phase 503, as thewall sheath gets discharged primarily by the ion current to the chamberwalls. As a result of the local plasma potential perturbation duringphases 501-503, the established sheath voltage, V_(SH), constitutes only˜75% of the overall negative jump in the substrate voltage waveform 510at the end of the phase 503. V_(SH)′. The negative jump V_(SH)′ definesthe maximum sheath voltage for given V_(SH) and T_(tet) (attainable onlywith near-infinite C_(w) and near-zero R_(pl)), and it is close to thenegative jump in the biasing electrode voltage waveform 500,V_(SH)′˜V_(OUT). The latter is because during the phase 503, the chuckcapacitor transfers only a small portion (∝C_(SH)/C_(p)<<1) of itsinitial charge to the sheath, thus maintaining a nearly constantpotential difference between the electrode and the substrate. Therelationship V_(SH)/V_(OUT)˜0.75-0.8 can be used in practice to estimateV_(SH) from the measured to V_(OUT).

A. Practical Considerations

The effective simplified electrical circuit 600 and the results ofnumerical simulations of that circuit are shown in FIGS. 6 and 7A-7Hrespectively. We note that to simulate a non-ideal switch with a finiteclosing time, in the actual PSPICE model we have substituted theconstant voltage source, V_(m), with a trapezoidal voltage pulse(synchronized with the switch control voltage pulse P₁) with the maximumvoltage V_(m) and a finite rise-time. All circuit parameters used inmodeling are given in Table 1:

TABLE 1 V_(m) τ_(rise) τ_(p) T L_(internal) L_(transm) R_(ros) C_(s)C_(e) C_(SH) I_(i) R_(pl) C_(w) I_(iw) C_(coat) 4175 V 25 ns 65 ns 2.5μs 300 nH 400 nH 150Ω 500 pF 7 nF 150 pF 1.5 A 7.5Ω 5 nF 5.5 A 1 μF

FIG. 7A illustrates a modeled nanosecond pulse generator output voltageover time, V₀(t), (and 3 waveform cycles). FIG. 7B is a close up view ofa portion of FIG. 7A. FIG. 70 illustrates a modeled voltage at thebiasing electrode, V_(s)(t), i.e. the voltage across C_(s), as shown incircuit 600 of FIG. 6. FIG. 7D is a close up view of a portion of FIG.7C. FIG. 7E illustrates modeled substrate potential, V_(sub), local(near-substrate) plasma potential. V_(pl), and near-wall plasmapotential, V_(w), as shown in FIG. 6. FIG. 7F is a close up view of aportion of FIG. 7D. FIG. 7G illustrates a modeled current through theexternal conductor (such as the transmission line 206) coupling thepulsed bias generator to the biasing electrode, I_(L)(t), i.e., thecurrent through the inductance L_(transm) in circuit 600 of FIG. 6. FIG.7H is a close up view of a portion of FIG. 7G.

Numerical results in FIGS. 7E and 7F clearly demonstrate that using apulsed bias generator 240 (comprising a nanosecond pulse generator 214and a current return output stage 215) produces a nearly constant sheath(and substrate) voltage for the majority of the waveform period, thuscreating a narrow single-peak IEDF (such as the single-peak IEDF 520shown in FIG. 5C). The pulse repetition frequency used to obtain theresults in FIGS. 7A-H is 400 kHz, and the corresponding waveform periodis 2.5 microseconds. The substrate potential waveforms of FIGS. 7E and7F comprise a small voltage droop (shown as ΔV_(sh) in FIG. 5B), whichaccumulates over the course of the ion current phase 504 and can beestimated as follows. Because during the ion current phase 504: (a) thevoltage at the biasing electrode (i.e., chucking pole) remains constantat the level determined by the resistor R_(ros) in the current-returnoutput stage, V_(esc)=I_(i)*R_(ros), and (b) the plasma potential alsoremains constant (close to zero)—it can be readily obtained that thesheath voltage droop ΔV_(sh) over the duration T₄ of the ion currentphase 504 (which is close to the waveform period T) is given by aformula:

$\begin{matrix}{{{\Delta\; V_{sh}} = \frac{I_{i}T}{C_{e} + C_{SH}}},} & (1)\end{matrix}$where I_(i) is the ion current flowing through the sheath. This formulareflects the fact that the ion current splits between the sheathcapacitor, C_(SH), and the chuck capacitor, C_(e), and needs todischarge them both in order to change the sheath voltage. The aboveformula can be used to select the appropriate parameters for effectiveoperation of the pulsed voltage biasing scheme proposed herein, andallows determination of its applicability limits.

For example, from the goal of maintaining a nearly constant sheathvoltage, V_(SH), we immediately get the requirement of a relativelysmall voltage droop, i.e.

$\frac{I_{i}T}{C_{e} + C_{SH}} ⪡ {V_{SH}.}$For a given ion current (typically 0.5-5 A), C_(e) and T, it gives therange of sheath voltages, for which the pulsed voltage biasing schemeproposed herein is most useful. This requirement shows that theeffectiveness of this biasing scheme in producing a narrow single-peakIEDF (i.e. IEDF 520 in FIG. 5C) increases with the desired sheathvoltage and ion energy, which makes it particularly suitable for suchchallenging high aspect ratio applications as “hard mask open” and“dielectric mold etch”, for example. More accurately, the relative widthof the single energy peak in the “mono-energetic” IEDF created with theuse of the biasing scheme described herein is determined by the ratioΔV_(sh)/V_(SH) or, in practical terms, by C_(e), I_(i), and T.

The above requirement also implies that the pulsed voltage biasingscheme proposed herein works better at higher pulse repetitionfrequencies (PRF) (or shorter periods T) of the pulsed voltage waveform(e.g. the voltage waveform 500 in FIG. 5A). Indeed, as can be seen fromeq. (1), the value of the voltage droop, ΔV_(sh), increases with theperiod, T. In turn, an increase in the voltage droop leads to anincrease in the relative width of the single-peak IEDF produced usingthe pulsed voltage biasing scheme proposed herein, ΔV_(sh)/V_(SH),consequently diminishing one's ability to precisely control the shape ofthe arbitrary IEDF created using this single-peak IEDF. However, we notethat the choice of PRF must be balanced against two additionalconsiderations. Namely: (a) the challenges of producing high-voltagenanosecond pulses increase greatly with the switching frequency, and (b)the duration T₄ of the ion current phase 504, during which ions areaccelerated towards the substrate surface and ion bombardment of thesubstrate surface occurs (e.g., etching occurs during an etchingprocess), needs to be much longer than the combined duration T₁+T₂+T₃ ofthe sheath collapse phase 501, the ESC recharging phase 502, and thesheath formation phase 503. This combined duration is determined only bythe circuit elements C_(s), R_(ros), L_(internal), L_(transm) (FIG. 6)independently of the pulse repetition frequency, and is typically about200-400 ns. Practically, 400 kHz is a reasonable choice of the pulserepetition frequency for ion currents up to a few Amps and C_(e) ofseveral nanofarads (e.g., 7-10 nF); provided that desired sheathvoltage. V_(SH), is much larger than ΔV_(sh) (e.g., V_(SH)˜3-8 kV, forthe above parameters).

It is also clear from the above requirement that it is beneficial tohave a large C_(e), which is why the pulsed voltage biasing schemeproposed herein works most effectively when the pulsed voltage isapplied to the chucking pole, rather than to the support base 207 (FIG.2), to which RF power is usually applied in conventional plasmareactors. Practically, C_(e) needs to be of the order of severalnanofarads for effective implementation of the proposed biasing scheme.For C_(SH)˜100-300 pF that is typical for high aspect ratioapplications, this also automatically implies that C_(e)>>C_(SH), whichis important for maximizing V_(SH)′ at a given V_(OUT).

We note that in the pulsed voltage biasing scheme proposed herein, thevoltage switching occurs only inside a nanosecond pulse generator andonly at relatively small voltages (e.g., 100-800V) that drive theprimary side of the output step-up transformer. This provides asignificant practical benefit when compared to previously proposedschemes, in which there is usually a second switch (positioned in placeof the resistive output stage) that needs to switch at the full sheathvoltage (i.e., at thousands of volts, for example). Presence of thesecond switch in these previously proposed biasing schemes considerablydecreases the system robustness and in practical terms limits theirextendibility to sufficiently high sheath voltages (e.g.,V_(SH)˜4000-8000 V) that are required for high aspect ratioapplications. The authors were not able to identify commerciallyavailable switches capable of switching at RF frequencies (e.g., 400kHz) and simultaneously high voltages of, e.g., 8,000V. It needs to bementioned here that the purpose of the blocking diode in FIG. 3 is toprevent the return current from flowing through the secondary winding ofthe step-up transformer instead of the current-return output stage,during phases 503 and 504.

The authors further note that the current-return output stage 215 maycontain a combination of reactive elements, like inductors andcapacitors (e.g., series inductor), without limiting its effectivenessin producing a nearly constant sheath voltage. We also note that thevalue of the resistor (e.g., resistor R_(ros) in FIG. 6) in thecurrent-return output stage needs to be determined based on powerbalance considerations combined with the requirement of minimizing theRC-discharge time, t_(stab)≈R_(ros) (C_(s)+C_(SH)), which determines theduration T₃ of the sheath formation phase 503. Other benefits of thepulsed voltage biasing scheme proposed herein include commercialavailability of the nanosecond pulse generator.

The pulsed voltage biasing scheme proposed herein can also be readilyintegrated with the high-voltage module (HVM) standardly used forchucking, i.e. “electrically clamping”, the substrate to the substratereceiving surface of the ESC substrate support, as shown in FIGS. 2 and3. Chucking the substrate allows filling a gap between the substratereceiving surface and the non-device side surface of the substrate withhelium gas (He), which is done in order to provide good thermal contactbetween the two and allow substrate temperature control by regulatingthe temperature of the ESC substrate support. Combining a DC chuckingvoltage produced by the HVM with the pulsed voltage produced by thepulsed bias generator (such as 240) at a biasing electrode (such as achucking pole 204) will result in an additional voltage offset of thepulsed voltage waveform (such as 500) equal to the DC chucking voltage.The effect of the HVM on the operation of the pulsed bias generator canbe made negligible by selecting appropriately large C_(hvm) and R_(hvm).The main function of the blocking capacitor C_(hvm) in the circuit 300is to protect the pulsed bias generator from the HVM DC voltage, whichthus drops across C_(hvm) and does not perturb the pulsed bias generatoroutput. The value of C_(hvm) needs to be selected such that whileblocking only the HVM DC voltage, it does not present any load to thepulsed bias generator's high-frequency output voltage. By selecting asufficiently large C_(hvm) (e.g., 40-80 nF) we can make it nearlytransparent for 400 kHz signal, in that it is much bigger than any otherrelevant capacitance in the system and the voltage drop across thiselement is very small compared to that across other relevant capacitors,such as C_(e), C_(SH). In turn, the purpose of the blocking resistorR_(hvm) is to block the high-frequency pulsed bias generator's voltageand minimize the current it induces in the HVM DC voltage supply. Thisblocking resistor R_(hvm) needs to be large enough to efficientlyminimize the current through it. For example, R_(hvm)>1 MOhm is largeenough to make the 400 kHz current from the pulsed bias generator intothe HVM negligible: I_(hvm)˜V_(OUT)/R_(hvm) is of the order of 5 mA peakand about 10 times lower when averaged over the waveform period. Theresultant average induced current of the order of 0.5-1 mA is indeedmuch smaller than a typical limitation for HVM power supplies, which isabout 5 mA DC current. The above estimates were made for V_(OUT)˜5 kV,where V_(OUT) (see FIG. 5A) is the positive voltage jump at the chuckingpole 204 during the sheath collapse phase 501 and the ESC rechargingphase 502, when the switch S1 remains in the closed (On) position andthe nanosecond pulse generator 214 maintains a substantially constantpositive voltage across its output. Note also, that when selectingR_(hvm), one needs to remember that it cannot be exceedingly large toensure that I_(leak)*R_(hvm)<<V_(hvm), which should not be too difficultto satisfy, considering that typical HVM leakage current, I_(leak), ison the order of a few tens of microamps.

FIG. 8 shows an oscilloscope trace of the measured substrate voltagewaveform produced by a practical implementation of the pulsed voltagebiasing scheme proposed herein. Measurements were performed inpredominantly O₂ plasma at 10 mT with the ion current to the wafer ofabout 1.35A, using a Lecroy PPE4 kV (100:1, 50MΩ/6 pF, 4 kVpp, 400 MHz)high-voltage oscilloscope probe coupled through an electrical (vacuum)feedthrough to a direct contact sensor. The sensor comprised a Kapton™coated wire dressed in Alumina beads, which was connected to alow-resistivity Silicon wafer using a sufficiently large patch (for goodcapacitive coupling) of aluminum tape with conductive adhesive; theconnection site was further covered by a Kapton™ tape and alumina paste.This diagnostic was bench-tested using a test signal from a functiongenerator, and the substrate potential measurements were alsoindependently verified using an aluminum wafer. As can be seen from FIG.8, the experimentally observed substrate voltage waveform is in a goodagreement with the model-generated waveform shown in FIG. 7E. A goodagreement between the model and experiment was also observed for anoscilloscope trace (not shown) of a plasma potential measured near thechamber lid using a floating Langmuir probe similarly coupled to aLecroy PPE4 kV probe through an electrical (vacuum) feedthrough. Namely,the measured waveform shows that the plasma potential relaxes to almostzero by the beginning of the ion current phase 504. These measurementsdemonstrate that a pulsed voltage biasing scheme proposed herein canindeed be used to generate a nearly constant sheath (substrate) voltagefor up to 90% of the substrate processing time, which in turn results ina narrow single-peak IEDF (i.e., IEDF 520 in FIG. 5C) that can be usedto create an IEDF with an arbitrary shape.

B. Detailed Description of FIG. 2: The Chamber Diagram

FIG. 2 is a schematic cross-sectional view of a processing chamberconfigured to practice the biasing schemes proposed herein, according toone embodiment. In this embodiment, the processing chamber is a plasmaprocessing chamber, such as a reactive ion etch (RIE) plasma chamber. Insome other embodiments, the processing chamber is a plasma-enhanceddeposition chamber, for example a plasma-enhanced chemical vapordeposition (PECVD) chamber, a plasma enhanced physical vapor deposition(PEPVD) chamber, or a plasma-enhanced atomic layer deposition (PEALD)chamber. In some other embodiments, the processing chamber is a plasmatreatment chamber, or a plasma based ion implant chamber, for example aplasma doping (PLAD) chamber. Herein, the processing chamber includes aninductively coupled plasma (ICP) source electrically coupled to a radiofrequency (RF) power supply. In other embodiments, the plasma source isa capacitively coupled plasma (CCP) source, such as a source electrodedisposed in the processing volume facing the substrate support, whereinthe source electrode is electrically coupled to an RF power supply.

The processing chamber 200 features a chamber body 213 which includes achamber lid 223, one or more sidewalls 222, and a chamber base 224 whichdefine a processing volume 226. A gas inlet 228 disposed through thechamber lid 223 is used to provide one or more processing gases to theprocessing volume 226 from a processing gas source 219 in fluidcommunication therewith. Herein, a plasma generator configured to igniteand maintain a processing plasma 201 from the processing gases includesone or more inductive coils 217 disposed proximate to the chamber lid223 outside of the processing volume 226. The one or more inductivecoils 217 are electrically coupled to an RF power supply 218 via an RFmatching circuit 230. The plasma generator is used to ignite andmaintain a plasma 201 using the processing gases and electromagneticfield generated by the inductive coils 217 and RF power supply 218. Theprocessing volume 226 is fluidly coupled to one or more dedicated vacuumpumps, through a vacuum outlet 220, which maintain the processing volume226 at sub-atmospheric conditions and evacuate processing, and/or othergases, therefrom. A substrate support assembly 236, disposed in theprocessing volume 226, is disposed on a support shaft 238 sealinglyextending through the chamber base 224.

The substrate 203 is loaded into, and removed from, the processingvolume 226 through an opening (not shown) in one of the one or moresidewalls 222, which is sealed with a door or a valve (not shown) duringplasma processing of the substrate 203. Herein, the substrate 203 istransferred to and from a receiving surface of an ESC substrate support205 using a lift pin system (not shown).

The substrate support assembly 236 includes a support base 207 and theESC substrate support 205 that is thermally coupled to, and disposed on,the support base 207. Typically, the support base 207 is used toregulate the temperature of the ESC substrate support 205, and thesubstrate 203 disposed on the ESC substrate support 205, duringsubstrate processing. In some embodiments, the support base 207 includesone or more cooling channels (not shown) disposed therein that arefluidly coupled to, and in fluid communication with, a coolant source(not shown), such as a refrigerant source or water source havingrelatively high electrical resistance. In some embodiments, the ESCsubstrate support 205 includes a heater (not shown), such as a resistiveheating element embedded in the dielectric material thereof. Herein, thesupport base 207 is formed of a corrosion resistant thermally conductivematerial, such as a corrosion resistant metal, for example aluminum,aluminum alloy, or stainless steel and is coupled to the substratesupport with an adhesive or by mechanical means. Typically, the ESCsubstrate support 205 is formed of a dielectric material, such as a bulksintered ceramic material, such as a corrosion resistant metal oxide ormetal nitride material, for example aluminum oxide (Al₂O₃), aluminumnitride (AlN), titanium oxide (TiO), titanium nitride (TiN), yttriumoxide (Y₂O₃), mixtures thereof, or combinations thereof. In embodimentsherein, the ESC substrate support 205 further includes a biasingelectrode 204 embedded in the dielectric material thereof. In oneconfiguration, the biasing electrode 204 is a chucking pole used tosecure (chuck) the substrate 203 to a supporting surface of the ESCsubstrate support 205 and to bias the substrate 203 with respect to theprocessing plasma 201 using a pulsed-voltage biasing scheme describedherein. Typically, the biasing electrode 204 is formed of one or moreelectrically conductive parts, such as one or more metal meshes, foils,plates, or combinations thereof. Herein, the biasing electrode 204 iselectrically coupled to a high voltage module 216 which provides achucking voltage thereto, such as static DC voltage between about −5000V and about 5000 V, using an electrical conductor, such as the coaxialtransmission line 206, e.g., a coaxial cable.

The support base 207 is electrically isolated from the chamber base 224by an insulator plate 211, and a ground plate 212 is interposed betweenthe insulator plate 211 and the chamber base 224. In some embodiments,the processing chamber 200 further includes a quartz pipe 210, orcollar, circumscribing the substrate support assembly 236 to preventcorrosion of the ESC substrate support 205 and, or, the support base 207from contact with corrosive processing gases or plasma, cleaning gasesor plasma, or byproducts thereof. Typically, the quartz pipe 210, theinsulator plate 211, and the ground plate are circumscribed by a liner208. Herein, a plasma screen 209 approximately coplanar with thesubstrate receiving surface of the ESC substrate support 205 preventsplasma from forming in a volume between the liner 208 and the one ormore sidewalls 222.

Herein, the biasing electrode 204 is spaced apart from the substratereceiving surface of the ESC substrate support 205, and thus from thesubstrate 203, by a layer of dielectric material of the ESC substratesupport 205. Typically, the layer of dielectric material has a thicknessbetween about 0.1 mm and about 1 mm, such as between about 0.1 mm andabout 0.5 mm, for example about 0.3 mm. Herein, the biasing electrode204 is electrically coupled to the pulsed bias generator 240 using theexternal conductor, such as the transmission line 206. The pulsed biasgenerator 240 and the components thereof are described in detail earlierin the text of this disclosure. As noted above, the dielectric materialand layer thickness can be selected so that the capacitance C_(e) of thelayer of dielectric material is between about 5 nF and about 12 nF, suchas between about 7 and about 10 nF, for example.

Generally, a low neutral fill pressure in the processing volume 226 ofthe processing chamber 200 results in poor thermal conduction betweensurfaces disposed therein, such as between the dielectric material ofthe ESC substrate support 205 and the substrate 203 disposed on thesubstrate receiving surface thereof, which reduces the ESC substratesupport's 205 effectiveness in heating or cooling the substrate 203.Therefore, in some processes, a thermally conductive inert heat transfergas, typically helium, is introduced into a volume (not shown) disposedbetween a non-device side surface of the substrate 203 and the substratereceiving surface of the ESC substrate support 205 to improve the heattransfer therebetween. The heat transfer gas, provided by a heattransfer gas source (not shown), flows to the backside volume through agas communication path (not shown) disposed through the support base 207and further disposed through the ESC substrate support 205.

The processing chamber 200 further includes a system controller 232. Thesystem controller 232 herein includes a central processing unit (CPU)233, a memory 234, and support circuits 235. The system controller 232is used to control the process sequence used to process the substrate203 including the substrate biasing methods described herein. The CPU233 is a general purpose computer processor configured for use in anindustrial setting for controlling processing chamber and sub-processorsrelated thereto. The memory 234 described herein may include randomaccess memory, read only memory, floppy or hard disk drive, or othersuitable forms of digital storage, local or remote. The support circuits235 are conventionally coupled to the CPU 233 and comprise cache, clockcircuits, input/output subsystems, power supplies, and the like, andcombinations thereof. Software instructions and data can be coded andstored within the memory 234 for instructing a processor within the CPU233. A program (or computer instructions) readable by the systemcontroller 232 determines which tasks are performable by the componentsin the processing chamber 200. Preferably, the program, which isreadable by the system controller 232, includes code, which whenexecuted by the processor, perform tasks relating to the monitoring andexecution of the electrode biasing scheme described herein. The programwill include instructions that are used to control the various hardwareand electrical components within the processing chamber 200 to performthe various process tasks and various process sequences used toimplement the electrode biasing scheme described herein.

While the foregoing is directed to embodiments of the presentdisclosure, other and further embodiments of the disclosure may bedevised without departing from the basic scope thereof, and the scopethereof is determined by the claims that follow.

The invention claimed is:
 1. A processing chamber, comprising: asubstrate support assembly comprising a biasing electrode and asubstrate supporting surface, wherein the biasing electrode is separatedfrom the substrate supporting surface by a layer of a dielectricmaterial, wherein the layer has a thickness of between about 0.1 mm andabout 1 mm; and a bias generator that is electrically coupled to agenerator end of an electrical conductor using a generator couplingassembly, and an electrode end of the electrical conductor iselectrically coupled to the biasing electrode using an electrodecoupling assembly, wherein the bias generator is configured to establisha pulsed voltage waveform at the biasing electrode, and comprises: apulse generator that is electrically coupled to the generator end of theelectrical conductor; and a current-return output stage, wherein a firstend of the current-return output stage is electrically coupled to theelectrical conductor, and a second end of the current-return outputstage is electrically coupled to ground.
 2. The processing chamber ofclaim 1, further comprising: a chucking power supply that iselectrically coupled to the generator end of the electrical conductorusing a supply coupling assembly.
 3. The processing chamber of claim 2,wherein the supply coupling assembly comprises a blocking resistor thathas a resistance of more than about 1 MOhm.
 4. The processing chamber ofclaim 1, wherein a parallel plate like structure comprising the biasingelectrode and the layer of the dielectric material has an effectivecapacitance of between about 5 nF and about 50 nF.
 5. The processingchamber of claim 1, wherein the substrate support assembly furthercomprises a substrate support and a support base, wherein the substratesupport comprises a dielectric material.
 6. The processing chamber ofclaim 5, wherein the substrate support has a second surface that ispositioned opposite to the substrate supporting surface, the supportbase is positioned adjacent to the second surface and comprises aplurality of cooling channels that are configured to receive a fluidfrom a coolant source, and the substrate support assembly furthercomprises an insulator plate that is disposed between a ground plate andthe support base.
 7. The processing chamber of claim 5, wherein thebiasing electrode is disposed within the substrate support of thesubstrate support assembly.
 8. The processing chamber of claim 5,wherein the substrate support has a second surface that is positionedbelow and opposite to the substrate supporting surface, and the biasingelectrode is disposed below the second surface.
 9. The processingchamber of claim 5, wherein the support base is configured to be used asa biasing electrode.
 10. The processing chamber of claim 1, wherein afirst end of the pulse generator is electrically coupled to thegenerator end of the electrical conductor, and a second end of the pulsegenerator is electrically coupled to ground.
 11. The processing chamberof claim 1, wherein the generator coupling assembly comprises one of thecomponents selected from the group consisting of a capacitor, acapacitor and an electrical conductor in series, an inductor, and aninductor and an electrical conductor in series.
 12. The processingchamber of claim 1, wherein the generator coupling assembly or theelectrode coupling assembly comprise an electrical conductor.
 13. Theprocessing chamber of claim 1, wherein the electrode coupling assemblycomprises one of the components selected from the group consisting of acapacitor, a capacitor and an electrical conductor in series, aninductor, and an inductor and an electrical conductor in series.
 14. Theprocessing chamber of claim 1, wherein the generator coupling assemblycomprises a capacitor having a capacitance in a range of about 40 nF toabout 80 nF.
 15. The processing chamber of claim 1, wherein theelectrical conductor comprises a first electrical conductor and a secondelectrical conductor that are electrically coupled in series, whereinone end of the first electrical conductor is electrically coupled to anoutput of the bias generator using the generator coupling assembly andone end of the second electrical conductor is electrically coupled tothe biasing electrode using the electrode coupling assembly.
 16. Amethod of processing of a substrate, comprising: generating a plasmaover a surface of a substrate disposed on a substrate supporting surfaceof a substrate support assembly; and biasing a biasing electrodedisposed within the substrate support assembly using a bias generatorthat is electrically coupled to a generator end of an electricalconductor using a generator coupling assembly, and a second end of theelectrical conductor is electrically coupled to the biasing electrodeusing an electrode coupling assembly, wherein: the biasing electrode isseparated from the substrate supporting surface by a layer of thedielectric material, wherein the layer has a thickness of between about0.1 mm and about 1 mm; the bias generator is configured to establish apulsed voltage waveform at the biasing electrode, and the pulsed voltagewaveform comprises a series of repeating cycles, a waveform within eachcycle of the series of repeating cycles has a first portion that occursduring a first time interval and a second portion that occurs during asecond time interval, a positive voltage pulse is only present duringthe first time interval, and the bias generator comprises: a pulsegenerator that is electrically coupled to the generator end of theelectrical conductor; and a current-return output stage, wherein a firstend of the current-return output stage is electrically coupled to theelectrical conductor, and a second end of the current-return outputstage is electrically coupled to ground, and wherein a current flowsfrom the biasing electrode to ground through the current-return outputstage during at least a portion of the second time interval.
 17. Themethod of claim 16, wherein a parallel plate like structure comprisingthe biasing electrode and the layer of the dielectric material has aneffective capacitance of between about 5 nF and about 50 nF.
 18. Themethod of claim 16, further comprising: a chucking power supply that iselectrically coupled to the generator end of the electrical conductorusing a supply coupling assembly.
 19. The method of claim 18, whereinthe supply coupling assembly comprises a blocking resistor that has aresistance of more than about 1 MOhm.
 20. The method of claim 16,wherein the electrical conductor comprises a first electrical conductorand a second electrical conductor that are electrically coupled inseries, wherein one end of the first electrical conductor iselectrically coupled to an output of the bias generator using thegenerator coupling assembly and one end of the second electricalconductor is electrically coupled to the biasing electrode using theelectrode coupling assembly.
 21. The method of claim 16, wherein thesubstrate support assembly further comprises a substrate support and asupport base, wherein the substrate support comprises a dielectricmaterial.
 22. The method of claim 21, wherein the substrate support hasa second surface that is positioned opposite to the substrate supportingsurface, the support base is positioned adjacent to the second surfaceand comprises a plurality of cooling channels that are configured toreceive a fluid from a coolant source, and the substrate supportassembly further comprises an insulator plate that is disposed between aground plate and the support base.
 23. The method of claim 21, whereinthe biasing electrode is disposed within the substrate support of thesubstrate support assembly.
 24. The method of claim 21, wherein thesubstrate support has a second surface that is positioned below andopposite to the substrate supporting surface, and the biasing electrodeis disposed below the second surface.
 25. The method of claim 21,wherein the support base is configured to be used as a biasingelectrode.
 26. The method of claim 16, wherein a first end of the pulsegenerator is electrically coupled to the generator end of the electricalconductor, and a second end of the pulse generator is electricallycoupled to ground.
 27. The method of claim 16, wherein the generatorcoupling assembly comprises one of the components selected from thegroup consisting of a capacitor, a capacitor and an electrical conductorin series, an inductor, and an inductor and an electrical conductor inseries.
 28. The method of claim 16, wherein the generator couplingassembly or the electrode coupling assembly comprise an electricalconductor.
 29. The method of claim 16, wherein the electrode couplingassembly comprises one of the components selected from the groupconsisting of a capacitor, a capacitor and an electrical conductor inseries, an inductor, and an inductor and an electrical conductor inseries.
 30. The method of claim 16, wherein the generator couplingassembly comprises a capacitor having a capacitance in a range of about40 nF to about 80 nF.